Making strides in rugged memory technology

Memory technology innovations have made a variety of ruggedized options available to embedded system OEMs, including lower-profile module designs, Error Correction Code (ECC), thermal dissipation, extended-temperature operation, and the addition of thermal sensors to monitor module temperature.

Embedded system OEMs look to Double Data Rate type three (DDR3) SODIMM memory modules as the mainstay for rugged embedded system design. Adding to the ruggedness of DDR3 SODIMM is new low-power, low-dissipation DDR3L memory modules, which solve a key embedded system design challenge. JEDEC stipulates that systems running memory beyond +85 °C must double the DDR3 self-refresh rate. DDR3L memory modules resolve the double refresh rate requirement by selecting the lowest total electrical current, incorporating thermal-relief copper pour methodology PCB design, reducing chip count, and utilizing 1.35 V DDR3 Dynamic Random-Access Memory (DRAM). Embedded computer compared to current DDR3 designs, DDR3L memory can save up to +10 °C per module and remove the double refresh rate requirement. Embedded computer Supplier-based testing has shown that depending on the components used, DDR3L modules contribute to significantly reducing power, thereby helping increase performance.

REFER TO: http://embedded-computing.com/articles/ruggedization-memory-module-design/

This entry was posted in Industrial PC and tagged , , , . Bookmark the permalink.

Leave a Reply